Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation—Part II: CNT Interconnect Optimization
نویسندگان
چکیده
The size and parameter optimization for the 5-nm carbon nanotube field effect transistor (CNFET) static random access memory (SRAM) cell was presented in Part I of this article. Based on that work, we propose a (CNT) SRAM array composed schematically optimized CNFET CNT interconnects. We consider interconnects inside metallic single-wall (M-SWCNT) bundles to represent metal layers 0 1 (M0 M1). investigate layout structure considering devices, M-SWCNT interconnects, electrode Palladium with (Pd-CNT) contacts. Two versions designs are explored compared terms performance, stability, power efficiency. Furthermore, implement 16 Kbit proposed cells, multiwall (MWCNTs) inter-cell Pd-CNT Such an shows significant advantages, read write overall energy-delay product (EDP), consumption, core area $0.28\times $ , notation="LaTeX">$0.52\times notation="LaTeX">$0.76\times respectively 7-nm FinFET-SRAM copper whereas noise margins 6% 12% larger than FinFET counterpart.
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ژورنال
عنوان ژورنال: IEEE Transactions on Very Large Scale Integration Systems
سال: 2022
ISSN: ['1063-8210', '1557-9999']
DOI: https://doi.org/10.1109/tvlsi.2022.3146064